Справочник MOSFET. AOW482

 

AOW482 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOW482
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 333 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 105 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 458 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0072 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для AOW482

 

 

AOW482 Datasheet (PDF)

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 aow482.pdf

AOW482 AOW482

AOW48280V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AOW482 is fabricated with SDMOSTM trench ID (at VGS=10V) 105Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 ..2. Size:298K  inchange semiconductor
 aow482.pdf

AOW482 AOW482

isc N-Channel MOSFET Transistor AOW482FEATURESDrain Current I =105A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:366K  aosemi
 aow480.pdf

AOW482 AOW482

AOW48080V N-Channel MOSFETTMSDMOSGeneral Description Product Summary VDS 80VThe AOW480 is fabricated with SDMOSTM trenchtechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V) 180Acharge & low Qrr.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

 9.2. Size:298K  inchange semiconductor
 aow480.pdf

AOW482 AOW482

isc N-Channel MOSFET Transistor AOW480FEATURESDrain Current I =180A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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