AOW482
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOW482
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 333
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7
V
|Id|ⓘ - Maximum Drain Current: 105
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 66.8
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 458
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072
Ohm
Package:
TO-262
AOW482
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOW482
Datasheet (PDF)
..1. Size:254K aosemi
aow482.pdf
AOW48280V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AOW482 is fabricated with SDMOSTM trench ID (at VGS=10V) 105Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
..2. Size:298K inchange semiconductor
aow482.pdf
isc N-Channel MOSFET Transistor AOW482FEATURESDrain Current I =105A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.1. Size:366K aosemi
aow480.pdf
AOW48080V N-Channel MOSFETTMSDMOSGeneral Description Product Summary VDS 80VThe AOW480 is fabricated with SDMOSTM trenchtechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V) 180Acharge & low Qrr.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
9.2. Size:298K inchange semiconductor
aow480.pdf
isc N-Channel MOSFET Transistor AOW480FEATURESDrain Current I =180A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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