AOWF11C60 Todos los transistores

 

AOWF11C60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOWF11C60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 84 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.44 Ohm

Encapsulados: TO-262F

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AOWF11C60 datasheet

 ..1. Size:432K  aosemi
 aowf11c60.pdf pdf_icon

AOWF11C60

AOWF11C60 600V,11A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max

 8.1. Size:259K  aosemi
 aowf11s65.pdf pdf_icon

AOWF11C60

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg

 8.2. Size:259K  aosemi
 aow11s65 aowf11s65.pdf pdf_icon

AOWF11C60

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg

 8.3. Size:277K  aosemi
 aowf11s60.pdf pdf_icon

AOWF11C60

AOW11S60/AOWF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW11S60 & AOWF11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg a

MOSTRAR MÁS

Otros transistores... AOW480 , AOW482 , AOW4S60 , AOW7S60 , AOW7S65 , AOWF10N60 , AOWF10N65 , AOWF10T60P , IRFB4115 , AOWF11N60 , AOWF11N70 , AOWF11S60 , AOWF11S65 , AOWF12N50 , AOWF12N60 , AOWF12N65 , AOWF12T60P .

History: BSZ100N06NS | SFN423P | HCF65R550 | 2SK1293 | BSZ15DC02KDH | SFG100N08PF | AUIRF7769L2TR

 

 

 

 

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