AOWF11C60 - описание и поиск аналогов

 

AOWF11C60. Аналоги и основные параметры

Наименование производителя: AOWF11C60

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 28 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

Cossⓘ - Выходная емкость: 84 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.44 Ohm

Тип корпуса: TO-262F

Аналог (замена) для AOWF11C60

- подборⓘ MOSFET транзистора по параметрам

 

AOWF11C60 даташит

 ..1. Size:432K  aosemi
 aowf11c60.pdf pdf_icon

AOWF11C60

AOWF11C60 600V,11A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max

 8.1. Size:259K  aosemi
 aowf11s65.pdf pdf_icon

AOWF11C60

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg

 8.2. Size:259K  aosemi
 aow11s65 aowf11s65.pdf pdf_icon

AOWF11C60

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg

 8.3. Size:277K  aosemi
 aowf11s60.pdf pdf_icon

AOWF11C60

AOW11S60/AOWF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW11S60 & AOWF11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg a

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AOW480 , AOW482 , AOW4S60 , AOW7S60 , AOW7S65 , AOWF10N60 , AOWF10N65 , AOWF10T60P , IRFB4115 , AOWF11N60 , AOWF11N70 , AOWF11S60 , AOWF11S65 , AOWF12N50 , AOWF12N60 , AOWF12N65 , AOWF12T60P .

History: SUD23N06-31 | RUF025N02

 

 

 

 

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