AOWF11C60 MOSFET Datasheet: N-Ch, 600V, 11A. Full specification with pinout and replacement list

AOWF11C60 Specs and Replacement

Type Designator: AOWF11C60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: TO-262F

AOWF11C60 substitution

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AOWF11C60 datasheet

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AOWF11C60 600V,11A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max ... See More ⇒

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AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg... See More ⇒

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8.3. Size:277K aosemi
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AOW11S60/AOWF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW11S60 & AOWF11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg a... See More ⇒