AOWF11N70 Todos los transistores

 

AOWF11N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOWF11N70
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 74 nS
   Cossⓘ - Capacitancia de salida: 146 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.87 Ohm
   Paquete / Cubierta: TO-262F
 

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AOWF11N70 Datasheet (PDF)

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AOWF11N70

AOWF11N70700V,11A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOWF11N70 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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 aowf11n60.pdf pdf_icon

AOWF11N70

AOWF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOWF11N60 has been fabricated using an 700V@150advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

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 aowf11s65.pdf pdf_icon

AOWF11N70

AOW11S65/AOWF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW11S65 & AOWF11S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 13.2nCBy providing low RDS(on), Qg

 8.2. Size:277K  aosemi
 aowf11s60.pdf pdf_icon

AOWF11N70

AOW11S60/AOWF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW11S60 & AOWF11S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 11nCBy providing low RDS(on), Qg a

MOSTRAR MÁS

Otros transistores... AOW4S60 , AOW7S60 , AOW7S65 , AOWF10N60 , AOWF10N65 , AOWF10T60P , AOWF11C60 , AOWF11N60 , IRFB4115 , AOWF11S60 , AOWF11S65 , AOWF12N50 , AOWF12N60 , AOWF12N65 , AOWF12T60P , AOWF14N50 , AOWF15S60 .

History: 2SK1773 | IPD60R1K5CE | NTMFS4C054N | SI8451DB | BUK9608-55B | CHM4435AZGP | 2SJ304

 

 
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