AOWF11N70 Todos los transistores

 ..1. Size:299K  aosemi
 aowf11n70.pdf

AOWF11N70 700V,11A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOWF11N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 7.1. Size:447K  aosemi
 aowf11n60.pdf

AOWF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOWF11N60 has been fabricated using an 700V@150 advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 8.1. Size:259K  aosemi
 aowf11s65.pdf

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg

 8.2. Size:259K  aosemi
 aow11s65 aowf11s65.pdf

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg

 8.3. Size:277K  aosemi
 aowf11s60.pdf

AOW11S60/AOWF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW11S60 & AOWF11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg a

 8.4. Size:277K  aosemi
 aow11s60 aowf11s60.pdf

AOW11S60/AOWF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW11S60 & AOWF11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg a

 8.5. Size:432K  aosemi
 aowf11c60.pdf

AOWF11C60 600V,11A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max