Справочник MOSFET. AOWF11N70

 

AOWF11N70 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOWF11N70
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 74 ns
   Cossⓘ - Выходная емкость: 146 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.87 Ohm
   Тип корпуса: TO-262F

 Аналог (замена) для AOWF11N70

 

 

AOWF11N70 Datasheet (PDF)

 ..1. Size:299K  aosemi
 aowf11n70.pdf

AOWF11N70 AOWF11N70

AOWF11N70700V,11A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOWF11N70 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 7.1. Size:447K  aosemi
 aowf11n60.pdf

AOWF11N70 AOWF11N70

AOWF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOWF11N60 has been fabricated using an 700V@150advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 8.1. Size:259K  aosemi
 aowf11s65.pdf

AOWF11N70 AOWF11N70

AOW11S65/AOWF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW11S65 & AOWF11S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 13.2nCBy providing low RDS(on), Qg

 8.2. Size:277K  aosemi
 aowf11s60.pdf

AOWF11N70 AOWF11N70

AOW11S60/AOWF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW11S60 & AOWF11S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 11nCBy providing low RDS(on), Qg a

 8.3. Size:432K  aosemi
 aowf11c60.pdf

AOWF11N70 AOWF11N70

AOWF11C60600V,11A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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