AOWF11N70 PDF and Equivalents Search

 

AOWF11N70 Specs and Replacement

Type Designator: AOWF11N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 146 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.87 Ohm

Package: TO-262F

AOWF11N70 substitution

- MOSFET ⓘ Cross-Reference Search

 

AOWF11N70 datasheet

 ..1. Size:299K  aosemi
aowf11n70.pdf pdf_icon

AOWF11N70

AOWF11N70 700V,11A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOWF11N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:447K  aosemi
aowf11n60.pdf pdf_icon

AOWF11N70

AOWF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOWF11N60 has been fabricated using an 700V@150 advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:259K  aosemi
aowf11s65.pdf pdf_icon

AOWF11N70

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg... See More ⇒

 8.2. Size:259K  aosemi
aow11s65 aowf11s65.pdf pdf_icon

AOWF11N70

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg... See More ⇒

Detailed specifications: AOW4S60, AOW7S60, AOW7S65, AOWF10N60, AOWF10N65, AOWF10T60P, AOWF11C60, AOWF11N60, P55NF06, AOWF11S60, AOWF11S65, AOWF12N50, AOWF12N60, AOWF12N65, AOWF12T60P, AOWF14N50, AOWF15S60

Keywords - AOWF11N70 MOSFET specs

 AOWF11N70 cross reference

 AOWF11N70 equivalent finder

 AOWF11N70 pdf lookup

 AOWF11N70 substitution

 AOWF11N70 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.