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2SK1070 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1070

Código: PIB_PIC_PID_PIE

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.15 W

Tensión drenaje-fuente (Vds): 22 V

Corriente continua de drenaje (Id): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 80 Ohm

Empaquetado / Estuche: MPAK

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2SK1070 Datasheet (PDF)

1.1. 2sk1070.pdf Size:84K _renesas

2SK1070
2SK1070

 Preliminary Datasheet R07DS0282EJ0300 2SK1070 (Previous: REJ03G0574-0200) Rev.3.00 Silicon N-Channel Junction FET Mar 28, 2011 Application  Low frequency / High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 1. Drain 2. Source 2 3. Gate Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage

4.1. 2sk1074.pdf Size:62K _update

2SK1070
2SK1070

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1074 DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 800 V DSS GS V Gate-Source Volta

4.2. 2sk1079.pdf Size:69K _update

2SK1070
2SK1070

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 4.3. 2sk1078.pdf Size:371K _toshiba2

2SK1070
2SK1070

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 
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