2SK1070
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1070
Marking Code: PIB_PIC_PID_PIE
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 22
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 0.05
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 80
Ohm
Package:
MPAK
2SK1070
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1070
Datasheet (PDF)
..1. Size:84K renesas
2sk1070.pdf
Preliminary Datasheet R07DS0282EJ03002SK1070 (Previous: REJ03G0574-0200)Rev.3.00Silicon N-Channel Junction FET Mar 28, 2011Application Low frequency / High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)311. Drain2. Source23. GateAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitGate to drain voltage
8.1. Size:69K toshiba
2sk1079.pdf
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8.2. Size:371K toshiba
2sk1078.pdf
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8.3. Size:62K inchange semiconductor
2sk1074.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1074 DESCRIPTION Drain Current ID=3A@ TC=25 Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 800 V DSS GSV Gate-Source Volta
8.4. Size:201K inchange semiconductor
2sk1073.pdf
isc N-Channel MOSFET Transistor 2SK1073DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 8
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