APT1001RSLC Todos los transistores

 

APT1001RSLC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT1001RSLC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 280 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: D3PAK

 Búsqueda de reemplazo de APT1001RSLC MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT1001RSLC datasheet

 ..1. Size:34K  apt
 apt1001rslc.pdf pdf_icon

APT1001RSLC

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast sw

 5.1. Size:63K  apt
 apt1001rsvrg.pdf pdf_icon

APT1001RSLC

APT1001RSVR 1000V 11A 1.000 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lowe

 5.2. Size:71K  apt
 apt1001rsvr.pdf pdf_icon

APT1001RSLC

APT1001RSVR 1000V 11A 1.000 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lowe

 5.3. Size:139K  apt
 apt1001rsvfr.pdf pdf_icon

APT1001RSLC

APT1001RBVFR APT1001RSVFR 1000V 11A 1.00 BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layou

MOSTRAR MÁS

Otros transistores... 2SK2651-01MR , 2SK2638-01MR , 2SK1916-01R , 2SK1772 , 2SK1070 , 2SJ450 , APT1001RBLC , APT1001RBVFR , 10N65 , APT10021JFLL , APT10021JLL , APT10025JLC , APT10026JFLL , APT10026JLL , APT10026L2FL , APT10026L2FLL , APT10026L2LL .

History: 2SK1566 | SWB090R08ET | 2SK3111-ZJ | SFF054 | AP95T07AGP | OSG65R380FEF | APT5014BLLG

 

 

 

 

↑ Back to Top
.