All MOSFET. APT1001RSLC Datasheet

 

APT1001RSLC MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT1001RSLC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: D3PAK

 APT1001RSLC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT1001RSLC Datasheet (PDF)

 ..1. Size:34K  apt
 apt1001rslc.pdf

APT1001RSLC APT1001RSLC

APT1001RBLCAPT1001RSLC1000V 11A 1.000WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast sw

 5.1. Size:63K  apt
 apt1001rsvrg.pdf

APT1001RSLC APT1001RSLC

APT1001RSVR1000V 11A 1.000POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lowe

 5.2. Size:71K  apt
 apt1001rsvr.pdf

APT1001RSLC APT1001RSLC

APT1001RSVR1000V 11A 1.000POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lowe

 5.3. Size:139K  apt
 apt1001rsvfr.pdf

APT1001RSLC APT1001RSLC

APT1001RBVFRAPT1001RSVFR1000V 11A 1.00BVFR POWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVFRalso achieves faster switching speeds through optimized gate layou

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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