APT1001RSLC. Аналоги и основные параметры
Наименование производителя: APT1001RSLC
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 280 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 280 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: D3PAK
Аналог (замена) для APT1001RSLC
- подборⓘ MOSFET транзистора по параметрам
APT1001RSLC даташит
apt1001rslc.pdf
APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast sw
apt1001rsvrg.pdf
APT1001RSVR 1000V 11A 1.000 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lowe
apt1001rsvr.pdf
APT1001RSVR 1000V 11A 1.000 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lowe
apt1001rsvfr.pdf
APT1001RBVFR APT1001RSVFR 1000V 11A 1.00 BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layou
Другие MOSFET... 2SK2651-01MR , 2SK2638-01MR , 2SK1916-01R , 2SK1772 , 2SK1070 , 2SJ450 , APT1001RBLC , APT1001RBVFR , 10N65 , APT10021JFLL , APT10021JLL , APT10025JLC , APT10026JFLL , APT10026JLL , APT10026L2FL , APT10026L2FLL , APT10026L2LL .
History: 2SK1009 | SMY52
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Список транзисторов
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