APT10040B2VFR Todos los transistores

 

APT10040B2VFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT10040B2VFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 690 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TMAX
 

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APT10040B2VFR Datasheet (PDF)

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 apt10040b2vfr.pdf pdf_icon

APT10040B2VFR

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

 0.1. Size:76K  apt
 apt10040b2vfrg apt10040lvfrg.pdf pdf_icon

APT10040B2VFR

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRFREDFETPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identica

 3.1. Size:37K  apt
 apt10040b2vr.pdf pdf_icon

APT10040B2VFR

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

 6.1. Size:75K  apt
 apt10040lvr.pdf pdf_icon

APT10040B2VFR

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

MOSTRAR MÁS

Otros transistores... APT10035LLL , APT10035JFLL , APT10035JLL , APT1003RSLL , APT1003RBLL , APT1003RKLL , APT4025BN , APT40M90JN , IRF1405 , APT10040B2VR , APT10045B2FLL , APT10045B2LL , APT10045JFLL , APT10045JLL , APT1004R2KN , APT10050B2LC , APT10050B2VFR .

History: SSG4503 | STP33N60M2 | SSF4414 | 2MI50S-050 | ME3424D | 2N7335E3 | ME3205F-G

 

 
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