Справочник MOSFET. APT10040B2VFR

 

APT10040B2VFR Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT10040B2VFR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 690 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TMAX
     - подбор MOSFET транзистора по параметрам

 

APT10040B2VFR Datasheet (PDF)

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APT10040B2VFR

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

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APT10040B2VFR

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRFREDFETPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identica

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APT10040B2VFR

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

 6.1. Size:75K  apt
apt10040lvr.pdfpdf_icon

APT10040B2VFR

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

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History: DMN3052LSS | FHF630A

 

 
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