APT10040B2VFR Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT10040B2VFR
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 690 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
Тип корпуса: TMAX
- подбор MOSFET транзистора по параметрам
APT10040B2VFR Datasheet (PDF)
apt10040b2vfr.pdf

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical
apt10040b2vfrg apt10040lvfrg.pdf

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRFREDFETPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identica
apt10040b2vr.pdf

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati
apt10040lvr.pdf

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati
Другие MOSFET... APT10035LLL , APT10035JFLL , APT10035JLL , APT1003RSLL , APT1003RBLL , APT1003RKLL , APT4025BN , APT40M90JN , IRFZ48N , APT10040B2VR , APT10045B2FLL , APT10045B2LL , APT10045JFLL , APT10045JLL , APT1004R2KN , APT10050B2LC , APT10050B2VFR .
History: DMN3052LSS | FHF630A
History: DMN3052LSS | FHF630A



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