All MOSFET. APT10040B2VFR Datasheet

 

APT10040B2VFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT10040B2VFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 380 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TMAX

 APT10040B2VFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT10040B2VFR Datasheet (PDF)

 ..1. Size:39K  apt
 apt10040b2vfr.pdf

APT10040B2VFR APT10040B2VFR

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

 0.1. Size:76K  apt
 apt10040b2vfrg apt10040lvfrg.pdf

APT10040B2VFR APT10040B2VFR

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRFREDFETPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identica

 3.1. Size:37K  apt
 apt10040b2vr.pdf

APT10040B2VFR APT10040B2VFR

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

 6.1. Size:75K  apt
 apt10040lvr.pdf

APT10040B2VFR APT10040B2VFR

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top