APT10090BLL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT10090BLL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 338 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de APT10090BLL MOSFET
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APT10090BLL datasheet
apt10090bll.pdf
APT10090BLL APT10090SLL 1000V 12A 0.900W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switchi
apt10090bllg apt10090sllg.pdf
APT10090BLL APT10090SLL 1000V 12A 0.950 BLL POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAK enhancement mode power MOSFETS. Both conduction and switch- ing losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching SLL losses along with exceptionally fa
apt10090bfllg apt10090sfllg.pdf
APT10090BFLL APT10090SFLL 1000V 12A 0.950 BFLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAK enhancement mode power MOSFETS. Both conduction and switch- ing losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching SFLL losses along with exceptiona
apt10090bfll.pdf
APT10090BFLL APT10090SFLL 1000V 12A 0.900W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally
Otros transistores... APT10078BFLL , APT10078SFLL , APT10078BLL , APT10078SLL , APT10086BLC , APT10086SLC , APT10090BFLL , APT10090SFLL , 20N60 , APT10090SLL , APT10M09B2VFR , APT10M09B2VR , APT10M30AVR , APT11N80BC3 , APT11N80KC3 , APT1201R2BLL , APT1201R2SLL .
History: BUK963R3-60E
History: BUK963R3-60E
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