APT10090BLL
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT10090BLL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 338
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9
Ohm
Package:
TO247
APT10090BLL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT10090BLL
Datasheet (PDF)
..1. Size:69K apt
apt10090bll.pdf 
APT10090BLLAPT10090SLL1000V 12A 0.900WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchi
0.1. Size:206K apt
apt10090bllg apt10090sllg.pdf
APT10090BLL APT10090SLL 1000V 12A 0.950BLL POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAKenhancement mode power MOSFETS. Both conduction and switch-ing losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching SLLlosses along with exceptionally fa
5.1. Size:206K apt
apt10090bfllg apt10090sfllg.pdf
APT10090BFLL APT10090SFLL 1000V 12A 0.950BFLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-ChannelD3PAKenhancement mode power MOSFETS. Both conduction and switch-ing losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching SFLLlosses along with exceptiona
5.2. Size:71K apt
apt10090bfll.pdf
APT10090BFLLAPT10090SFLL1000V 12A 0.900WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally
Datasheet: WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, IRFP250N
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.
