APT10090BLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT10090BLL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 300 W
Предельно допустимое напряжение сток-исток |Uds|: 1000 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 12 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 338 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.9 Ohm
Тип корпуса: TO247
Аналог (замена) для APT10090BLL
APT10090BLL Datasheet (PDF)
apt10090bll.pdf
APT10090BLLAPT10090SLL1000V 12A 0.900WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchi
apt10090bllg apt10090sllg.pdf
APT10090BLL APT10090SLL 1000V 12A 0.950BLL POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAKenhancement mode power MOSFETS. Both conduction and switch-ing losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching SLLlosses along with exceptionally fa
apt10090bfllg apt10090sfllg.pdf
APT10090BFLL APT10090SFLL 1000V 12A 0.950BFLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-ChannelD3PAKenhancement mode power MOSFETS. Both conduction and switch-ing losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching SFLLlosses along with exceptiona
apt10090bfll.pdf
APT10090BFLLAPT10090SFLL1000V 12A 0.900WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally
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