APT12080B2VFR Todos los transistores

 

APT12080B2VFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT12080B2VFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 520 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TMAX
 

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APT12080B2VFR datasheet

 ..1. Size:111K  apt
 apt12080b2vfr.pdf pdf_icon

APT12080B2VFR

APT12080B2VFR APT12080LVFR 1200V 16A 0.800 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement T-MAX TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 0.1. Size:118K  apt
 apt12080b2vfrg apt12080lvfrg.pdf pdf_icon

APT12080B2VFR

APT12080B2VFR APT12080LVFR 1200V 16A 0.800 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement T-MAX TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 6.1. Size:112K  apt
 apt12080jvfr.pdf pdf_icon

APT12080B2VFR

APT12080JVFR 1200V 15A 0.800 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" ISOTOP also achieves faster switching speeds through optimized gate layout. D Faster Swit

 6.2. Size:203K  apt
 apt12080jvr.pdf pdf_icon

APT12080B2VFR

APT12080JVR 1200V 15A 0.800W POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

MOSTRAR MÁS

Otros transistores... APT12045L2VFR , APT12045L2VR , APT12057B2LL , APT12057JLL , APT12060B2VFR , APT12060B2VR , APT12067B2LL , APT12067JLL , 2SK3878 , APT12080JVFR , APT14050JVFR , APT17N80BC3 , APT17N80SC3 , APT20M10JFLL , APT20M10JLL , APT20M16B2FLL , APT20M16B2LL .

History: HP80N80

 

 
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