APT12080B2VFR - описание и поиск аналогов

APT12080B2VFR APT12080LVFR 1200V 16A 0.800 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement T-MAX TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

APT12080B2VFR APT12080LVFR 1200V 16A 0.800 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement T-MAX TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

APT12080JVFR 1200V 15A 0.800 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" ISOTOP also achieves faster switching speeds through optimized gate layout. D Faster Swit

APT12080JVR 1200V 15A 0.800W POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

APT12080LVR 1200V 16A 0.800 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe