All MOSFET. APT12080B2VFR Datasheet

 

APT12080B2VFR Datasheet and Replacement


   Type Designator: APT12080B2VFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 325 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TMAX
 

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APT12080B2VFR Datasheet (PDF)

 ..1. Size:111K  apt
 apt12080b2vfr.pdf pdf_icon

APT12080B2VFR

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 0.1. Size:118K  apt
 apt12080b2vfrg apt12080lvfrg.pdf pdf_icon

APT12080B2VFR

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 6.1. Size:112K  apt
 apt12080jvfr.pdf pdf_icon

APT12080B2VFR

APT12080JVFR1200V 15A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"ISOTOPalso achieves faster switching speeds through optimized gate layout.D Faster Swit

 6.2. Size:203K  apt
 apt12080jvr.pdf pdf_icon

APT12080B2VFR

APT12080JVR1200V 15A 0.800WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

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Datasheet: APT12045L2VFR , APT12045L2VR , APT12057B2LL , APT12057JLL , APT12060B2VFR , APT12060B2VR , APT12067B2LL , APT12067JLL , IRFP260 , APT12080JVFR , APT14050JVFR , APT17N80BC3 , APT17N80SC3 , APT20M10JFLL , APT20M10JLL , APT20M16B2FLL , APT20M16B2LL .

History: NTTFS3A08PZ | NCE30PD08S | RU30L15H | NCEP12T10F | IPP029N06N | SIS407ADN | SWI051R08ES

Keywords - APT12080B2VFR MOSFET datasheet

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