All MOSFET. APT12080B2VFR Datasheet

 

APT12080B2VFR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT12080B2VFR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 520 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 530 pF

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TMAX

APT12080B2VFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT12080B2VFR Datasheet (PDF)

1.1. apt12080b2vfr.pdf Size:111K _apt

APT12080B2VFR
APT12080B2VFR

APT12080B2VFR APT12080LVFR Ω 1200V 16A 0.800Ω Ω Ω Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement T-MAX™ TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. •

2.1. apt12080jvfr.pdf Size:112K _apt

APT12080B2VFR
APT12080B2VFR

APT12080JVFR Ω 1200V 15A 0.800Ω Ω Ω Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® "UL Recognized" ISOTOP® also achieves faster switching speeds through optimized gate layout. D • Faster Swit

2.2. apt12080lvr.pdf Size:61K _apt

APT12080B2VFR
APT12080B2VFR

APT12080LVR 1200V 16A 0.800Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

2.3. apt12080jvr.pdf Size:203K _apt

APT12080B2VFR
APT12080B2VFR

APT12080JVR 1200V 15A 0.800W POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche T

Datasheet: APT12045L2VFR , APT12045L2VR , APT12057B2LL , APT12057JLL , APT12060B2VFR , APT12060B2VR , APT12067B2LL , APT12067JLL , IRFP064N , APT12080JVFR , APT14050JVFR , APT17N80BC3 , APT17N80SC3 , APT20M10JFLL , APT20M10JLL , APT20M16B2FLL , APT20M16B2LL .

 


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