APT30M40B2VR Todos los transistores

 

APT30M40B2VR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT30M40B2VR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 520 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 76 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 1500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TMAX
 

 Búsqueda de reemplazo de APT30M40B2VR MOSFET

   - Selección ⓘ de transistores por parámetros

 

APT30M40B2VR Datasheet (PDF)

 ..1. Size:116K  apt
 apt30m40b2vr.pdf pdf_icon

APT30M40B2VR

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching

 0.1. Size:88K  apt
 apt30m40b2vrg.pdf pdf_icon

APT30M40B2VR

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching

 3.1. Size:116K  apt
 apt30m40b2vfrg.pdf pdf_icon

APT30M40B2VR

APT30M40B2VFRAPT30M40LVFR300V 76A 0.040B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout

 6.1. Size:70K  apt
 apt30m40jvr.pdf pdf_icon

APT30M40B2VR

APT30M40JVR300V 70A 0.040POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalanc

MOSTRAR MÁS

Otros transistores... APT20M36BLL , 2SK310 , APT20N60BC3 , APT30M17JLL , APT30M30B2LL , APT30M30JLL , APT30M36B2LL , APT30M36JLL , 13N50 , APT30M61BLL , APT30M75BLL , APT31N80JC3 , APT34N80B2C3 , APT4525AN , APT47N60BC3 , APT5010B2FLL , APT5010B2LC .

History: TSM2308CX | SSM3K318T | R6035KNZ | STB120N4F6 | SSM3K309T | APT5010B2LL

 

 
Back to Top

 


 
.