APT30M40B2VR Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT30M40B2VR
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 520 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 76 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 1500 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: TMAX
Аналог (замена) для APT30M40B2VR
APT30M40B2VR Datasheet (PDF)
apt30m40b2vr.pdf

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching
apt30m40b2vrg.pdf

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching
apt30m40b2vfrg.pdf

APT30M40B2VFRAPT30M40LVFR300V 76A 0.040B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout
apt30m40jvr.pdf

APT30M40JVR300V 70A 0.040POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalanc
Другие MOSFET... APT20M36BLL , 2SK310 , APT20N60BC3 , APT30M17JLL , APT30M30B2LL , APT30M30JLL , APT30M36B2LL , APT30M36JLL , IRFZ24N , APT30M61BLL , APT30M75BLL , APT31N80JC3 , APT34N80B2C3 , APT4525AN , APT47N60BC3 , APT5010B2FLL , APT5010B2LC .
History: R6006JNX | MTM86124 | MDF18N50 | BUK9Y12-40E | 10N30 | HGK020N10S
History: R6006JNX | MTM86124 | MDF18N50 | BUK9Y12-40E | 10N30 | HGK020N10S



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