APT30M40B2VR Specs and Replacement

Type Designator: APT30M40B2VR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TMAX

APT30M40B2VR substitution

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APT30M40B2VR datasheet

 ..1. Size:116K  apt
 apt30m40b2vr.pdf pdf_icon

APT30M40B2VR

APT30M40B2VR APT30M40LVR 300V 76A 0.040W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. LVR Faster Switching ... See More ⇒

 0.1. Size:88K  apt
 apt30m40b2vrg.pdf pdf_icon

APT30M40B2VR

APT30M40B2VR APT30M40LVR 300V 76A 0.040W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. LVR Faster Switching ... See More ⇒

 3.1. Size:116K  apt
 apt30m40b2vfrg.pdf pdf_icon

APT30M40B2VR

APT30M40B2VFR APT30M40LVFR 300V 76A 0.040 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout... See More ⇒

 6.1. Size:70K  apt
 apt30m40jvr.pdf pdf_icon

APT30M40B2VR

APT30M40JVR 300V 70A 0.040 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalanc... See More ⇒

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Detailed specifications: APT20M36BLL, 2SK310, APT20N60BC3, APT30M17JLL, APT30M30B2LL, APT30M30JLL, APT30M36B2LL, APT30M36JLL, TK10A60D, APT30M61BLL, APT30M75BLL, APT31N80JC3, APT34N80B2C3, APT4525AN, APT47N60BC3, APT5010B2FLL, APT5010B2LC

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