APT5010JVRU3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT5010JVRU3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 450 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 44 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 1050 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: SOT227
Búsqueda de reemplazo de APT5010JVRU3 MOSFET
APT5010JVRU3 Datasheet (PDF)
apt5010jvru3.pdf
APT5010JVRU3500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan
apt5010jvru2.pdf
APT5010JVRU2500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan
apt5010jvr.pdf
APT5010JVR500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T
apt5010jvfr.pdf
APT5010JVFR500V 44A 0.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode
Otros transistores... APT47N60BC3 , APT5010B2FLL , APT5010B2LC , APT5010B2LL , APT5010JFLL , APT5010JLC , APT5010JLL , APT5010JVRU2 , CS150N03A8 , APT5014B2LC , APT5014BFLL , APT5014BLL , APT5016BFLL , APT5016BLL , APT5017BLC , APT5018BFLL , APT5018BLL .
History: UTT30P06G-TM3-T
History: UTT30P06G-TM3-T
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