APT5010JVRU3 Todos los transistores

 

APT5010JVRU3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT5010JVRU3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 450 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 1050 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT227
 

 Búsqueda de reemplazo de APT5010JVRU3 MOSFET

   - Selección ⓘ de transistores por parámetros

 

APT5010JVRU3 Datasheet (PDF)

 ..1. Size:112K  apt
apt5010jvru3.pdf pdf_icon

APT5010JVRU3

APT5010JVRU3500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan

 3.1. Size:111K  apt
apt5010jvru2.pdf pdf_icon

APT5010JVRU3

APT5010JVRU2500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan

 4.1. Size:71K  apt
apt5010jvr.pdf pdf_icon

APT5010JVRU3

APT5010JVR500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

 5.1. Size:73K  apt
apt5010jvfr.pdf pdf_icon

APT5010JVRU3

APT5010JVFR500V 44A 0.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

Otros transistores... APT47N60BC3 , APT5010B2FLL , APT5010B2LC , APT5010B2LL , APT5010JFLL , APT5010JLC , APT5010JLL , APT5010JVRU2 , CS150N03A8 , APT5014B2LC , APT5014BFLL , APT5014BLL , APT5016BFLL , APT5016BLL , APT5017BLC , APT5018BFLL , APT5018BLL .

 

 
Back to Top

 


 
.