APT5010JVRU3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT5010JVRU3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 450 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 44 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 1050 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SOT227

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APT5010JVRU3 datasheet

 ..1. Size:112K  apt
 apt5010jvru3.pdf pdf_icon

APT5010JVRU3

APT5010JVRU3 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalan

 3.1. Size:111K  apt
 apt5010jvru2.pdf pdf_icon

APT5010JVRU3

APT5010JVRU2 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalan

 4.1. Size:71K  apt
 apt5010jvr.pdf pdf_icon

APT5010JVRU3

APT5010JVR 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

 5.1. Size:73K  apt
 apt5010jvfr.pdf pdf_icon

APT5010JVRU3

APT5010JVFR 500V 44A 0.100 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Fast Recovery Body Diode

MOSTRAR MÁS

Otros transistores... APT47N60BC3, APT5010B2FLL, APT5010B2LC, APT5010B2LL, APT5010JFLL, APT5010JLC, APT5010JLL, APT5010JVRU2, IRF520, APT5014B2LC, APT5014BFLL, APT5014BLL, APT5016BFLL, APT5016BLL, APT5017BLC, APT5018BFLL, APT5018BLL