All MOSFET. APT5010JVRU3 Datasheet

 

APT5010JVRU3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT5010JVRU3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 312 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT227

 APT5010JVRU3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT5010JVRU3 Datasheet (PDF)

 ..1. Size:112K  apt
 apt5010jvru3.pdf

APT5010JVRU3 APT5010JVRU3

APT5010JVRU3500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan

 3.1. Size:111K  apt
 apt5010jvru2.pdf

APT5010JVRU3 APT5010JVRU3

APT5010JVRU2500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan

 4.1. Size:71K  apt
 apt5010jvr.pdf

APT5010JVRU3 APT5010JVRU3

APT5010JVR500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

 5.1. Size:73K  apt
 apt5010jvfr.pdf

APT5010JVRU3 APT5010JVRU3

APT5010JVFR500V 44A 0.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK3535-01

 

 
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