APT5010JVRU3 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT5010JVRU3
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 450 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 44 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 1050 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: SOT227
Аналог (замена) для APT5010JVRU3
APT5010JVRU3 Datasheet (PDF)
apt5010jvru3.pdf

APT5010JVRU3500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan
apt5010jvru2.pdf

APT5010JVRU2500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan
apt5010jvr.pdf

APT5010JVR500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T
apt5010jvfr.pdf

APT5010JVFR500V 44A 0.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode
Другие MOSFET... APT47N60BC3 , APT5010B2FLL , APT5010B2LC , APT5010B2LL , APT5010JFLL , APT5010JLC , APT5010JLL , APT5010JVRU2 , CS150N03A8 , APT5014B2LC , APT5014BFLL , APT5014BLL , APT5016BFLL , APT5016BLL , APT5017BLC , APT5018BFLL , APT5018BLL .
History: 2SJ578 | HUF75637S3 | IRF3709L
History: 2SJ578 | HUF75637S3 | IRF3709L



Список транзисторов
Обновления
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