APT50M60L2VR Todos los transistores

 

APT50M60L2VR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT50M60L2VR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 825 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 77 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 1600 pF

Resistencia drenaje-fuente RDS(on): 0.06 Ohm

Empaquetado / Estuche: TO264

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APT50M60L2VR Datasheet (PDF)

1.1. apt50m60l2vrg.pdf Size:167K _update_mosfet

APT50M60L2VR
APT50M60L2VR

APT50M60L2VR Ω 500V 77A 0.060Ω Ω Ω Ω POWER MOS V® MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package

1.2. apt50m60l2vfrg.pdf Size:158K _update_mosfet

APT50M60L2VR
APT50M60L2VR

APT50M60L2VFR Ω 500V 77A 0.060Ω Ω Ω Ω POWER MOS V® FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • TO-264 MAX Packa

 1.3. apt50m60l2vfr.pdf Size:79K _apt

APT50M60L2VR
APT50M60L2VR

APT50M60L2VFR 500V 77A 0.060W POWER MOS V® FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • Faster Switching D

1.4. apt50m60l2vr.pdf Size:33K _apt

APT50M60L2VR
APT50M60L2VR

APT50M60L2VR 500V 77A 0.060W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D

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