APT50M60L2VR Specs and Replacement

Type Designator: APT50M60L2VR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 825 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 77 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO264

APT50M60L2VR substitution

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APT50M60L2VR datasheet

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APT50M60L2VR

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APT50M60L2VR

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APT50M60L2VR

APT50M60L2VFR 500V 77A 0.060W POWER MOS V FREDFET TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Faster Switching D ... See More ⇒

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 apt50m60l2vfrg.pdf pdf_icon

APT50M60L2VR

APT50M60L2VFR 500V 77A 0.060 POWER MOS V FREDFET TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D TO-264 MAX Packa... See More ⇒

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Detailed specifications: APT5024BFLL, APT5024SVR, APT5027BVR, APT50M50JFLL, APT50M50JLC, APT50M50L2FLL, APT50M50L2LL, APT50M60L2VFR, IRFB7545, APT50M65B2FLL, APT50M65B2LL, APT50M65JFLL, APT50M65JLL, APT50M75B2FLL, APT50M75B2LL, APT50M75JFLL, APT50M75JLL

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