APT50M80B2LC Todos los transistores

 

APT50M80B2LC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT50M80B2LC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 625 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 58 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 13 nS

Conductancia de drenaje-sustrato (Cd): 1220 pF

Resistencia drenaje-fuente RDS(on): 0.08 Ohm

Empaquetado / Estuche: TMAX

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APT50M80B2LC Datasheet (PDF)

1.1. apt50m80b2vrg apt50m80lvrg.pdf Size:92K _update_mosfet

APT50M80B2LC
APT50M80B2LC

APT50M80B2VR APT50M80LVR Ω 500V 58A 0.080Ω Ω Ω Ω POWER MOS V® TM T-Max Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical

1.2. apt50m80b2vfrg apt50m80lvfrg.pdf Size:94K _update_mosfet

APT50M80B2LC
APT50M80B2LC

APT50M80B2VFR APT50M80LVFR Ω 500V 58A 0.080Ω Ω Ω Ω POWER MOS V® FREDFET TM T-Max Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. •

 1.3. apt50m80b2vr.pdf Size:36K _apt

APT50M80B2LC
APT50M80B2LC

APT50M80B2VR APT50M80LVR 500V 58A 0.080W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificatio

1.4. apt50m80b2vfr.pdf Size:33K _apt

APT50M80B2LC
APT50M80B2LC

APT50M80B2VFR 500V 58A 0.080W POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche T

 1.5. apt50m80b2lc.pdf Size:34K _apt

APT50M80B2LC
APT50M80B2LC

APT50M80B2LC APT50M80LLC 500V 58A 0.080W B2LC TM POWER MOS VI T-MAX™ Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fas

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