APT50M80B2LC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT50M80B2LC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 58 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 1220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TMAX

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APT50M80B2LC Datasheet (PDF)

..1. Size:34K apt
apt50m80b2lc.pdf

APT50M80B2LCAPT50M80LLC500V 58A 0.080WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fas

4.1. Size:33K apt
apt50m80b2vfr.pdf

APT50M80B2VFR500V 58A 0.080WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

4.2. Size:94K apt
apt50m80b2vfrg apt50m80lvfrg.pdf

APT50M80B2VFRAPT50M80LVFR500V 58A 0.080POWER MOS V FREDFETTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

4.3. Size:36K apt
apt50m80b2vr.pdf

APT50M80B2VRAPT50M80LVR500V 58A 0.080WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio

4.4. Size:92K apt
apt50m80b2vrg apt50m80lvrg.pdf

APT50M80B2VRAPT50M80LVR500V 58A 0.080POWER MOS VTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Identical

4.5. Size:376K inchange semiconductor
apt50m80b2vfr.pdf

isc N-Channel MOSFET Transistor APT50M80B2VFRFEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.08(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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