All MOSFET. APT50M80B2LC Datasheet

 

APT50M80B2LC Datasheet and Replacement


   Type Designator: APT50M80B2LC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TMAX
 

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APT50M80B2LC Datasheet (PDF)

 ..1. Size:34K  apt
apt50m80b2lc.pdf pdf_icon

APT50M80B2LC

APT50M80B2LCAPT50M80LLC500V 58A 0.080WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fas

 4.1. Size:33K  apt
apt50m80b2vfr.pdf pdf_icon

APT50M80B2LC

APT50M80B2VFR500V 58A 0.080WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

 4.2. Size:94K  apt
apt50m80b2vfrg apt50m80lvfrg.pdf pdf_icon

APT50M80B2LC

APT50M80B2VFRAPT50M80LVFR500V 58A 0.080POWER MOS V FREDFETTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 4.3. Size:36K  apt
apt50m80b2vr.pdf pdf_icon

APT50M80B2LC

APT50M80B2VRAPT50M80LVR500V 58A 0.080WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio

Datasheet: APT50M65B2LL , APT50M65JFLL , APT50M65JLL , APT50M75B2FLL , APT50M75B2LL , APT50M75JFLL , APT50M75JLL , APT50M75JLLU2 , IRFP064N , APT50M80B2VFR , APT50M80B2VR , APT50M80JLC , APT50M85B2VFR , APT50M85B2VR , APT5560AN , APT6010B2LL , APT6010JFLL .

History: 2SK3900

Keywords - APT50M80B2LC MOSFET datasheet

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