APT60M80JVR Todos los transistores

 

APT60M80JVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT60M80JVR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 568 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 1571 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOT227
 

 Búsqueda de reemplazo de APT60M80JVR MOSFET

   - Selección ⓘ de transistores por parámetros

 

APT60M80JVR Datasheet (PDF)

 ..1. Size:69K  apt
apt60m80jvr.pdf pdf_icon

APT60M80JVR

APT60M80JVR600V 55A 0.080POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Popular SOT-227

 6.1. Size:160K  apt
apt60m80l2vrg.pdf pdf_icon

APT60M80JVR

APT60M80L2VR600V 65A 0.080 POWER MOS V MOSFETL2VRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Pack

 6.2. Size:160K  apt
apt60m80l2vfrg.pdf pdf_icon

APT60M80JVR

APT60M80L2VFR600V 65A 0.080 POWER MOS V FREDFETL2VFRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX P

 6.3. Size:77K  apt
apt60m80l2vr.pdf pdf_icon

APT60M80JVR

APT60M80L2VR600V 65A 0.080WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD

Otros transistores... APT6040BVR , APT6060BNR , APT60M60JFLL , APT60M60JLL , APT60M75JFLL , APT60M75JLL , APT60M75L2FLL , APT60M75L2LL , 4N60 , APT60M80L2VR , APT77N60JC3 , APT8011JFLL , APT8011JLL , APT8014JFLL , APT8014JLL , APT8014L2FLL , APT8014L2LL .

History: SI7904BDN | PDC906Z | AP01N60J | PSMN9R0-30LL | FDZ201N | FDPF12N35 | MSK3419DF

 

 
Back to Top

 


 
.