APT60M80JVR Todos los transistores

 

APT60M80JVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT60M80JVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 568 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 55 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 1571 pF

Resistencia drenaje-fuente RDS(on): 0.08 Ohm

Empaquetado / Estuche: SOT227

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APT60M80JVR Datasheet (PDF)

1.1. apt60m80jvr.pdf Size:69K _apt

APT60M80JVR
APT60M80JVR

APT60M80JVR Ω 600V 55A 0.080Ω Ω Ω Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Popular SOT-227

2.1. apt60m80l2vfrg.pdf Size:160K _update_mosfet

APT60M80JVR
APT60M80JVR

APT60M80L2VFR Ω 600V 65A 0.080Ω Ω Ω Ω POWER MOS V® FREDFET L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX P

2.2. apt60m80l2vrg.pdf Size:160K _update_mosfet

APT60M80JVR
APT60M80JVR

APT60M80L2VR Ω 600V 65A 0.080Ω Ω Ω Ω POWER MOS V® MOSFET L2VR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Pack

 2.3. apt60m80l2vr.pdf Size:77K _apt

APT60M80JVR
APT60M80JVR

APT60M80L2VR 600V 65A 0.080W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D

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