APT60M80JVR Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT60M80JVR
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 568 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 55 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 1571 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: SOT227
- подбор MOSFET транзистора по параметрам
APT60M80JVR Datasheet (PDF)
apt60m80jvr.pdf

APT60M80JVR600V 55A 0.080POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Popular SOT-227
apt60m80l2vrg.pdf

APT60M80L2VR600V 65A 0.080 POWER MOS V MOSFETL2VRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Pack
apt60m80l2vfrg.pdf

APT60M80L2VFR600V 65A 0.080 POWER MOS V FREDFETL2VFRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX P
apt60m80l2vr.pdf

APT60M80L2VR600V 65A 0.080WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD
Другие MOSFET... APT6040BVR , APT6060BNR , APT60M60JFLL , APT60M60JLL , APT60M75JFLL , APT60M75JLL , APT60M75L2FLL , APT60M75L2LL , 18N50 , APT60M80L2VR , APT77N60JC3 , APT8011JFLL , APT8011JLL , APT8014JFLL , APT8014JLL , APT8014L2FLL , APT8014L2LL .
History: FQD2N60TF | UPA1770 | KRF7703 | IXTH10N60 | RU1HL8L | TSM4946DCS | NTB004N10G
History: FQD2N60TF | UPA1770 | KRF7703 | IXTH10N60 | RU1HL8L | TSM4946DCS | NTB004N10G



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