APT60M80JVR Specs and Replacement
Type Designator: APT60M80JVR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 568 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 1571 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOT227
APT60M80JVR substitution
- MOSFET ⓘ Cross-Reference Search
APT60M80JVR datasheet
apt60m80jvr.pdf
APT60M80JVR 600V 55A 0.080 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Popular SOT-227 ... See More ⇒
apt60m80l2vrg.pdf
APT60M80L2VR 600V 65A 0.080 POWER MOS V MOSFET L2VR TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Pack... See More ⇒
apt60m80l2vfrg.pdf
APT60M80L2VFR 600V 65A 0.080 POWER MOS V FREDFET L2VFR TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX P... See More ⇒
Detailed specifications: APT6040BVR, APT6060BNR, APT60M60JFLL, APT60M60JLL, APT60M75JFLL, APT60M75JLL, APT60M75L2FLL, APT60M75L2LL, 12N60, APT60M80L2VR, APT77N60JC3, APT8011JFLL, APT8011JLL, APT8014JFLL, APT8014JLL, APT8014L2FLL, APT8014L2LL
Keywords - APT60M80JVR MOSFET specs
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