APT60M80L2VR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT60M80L2VR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 830 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 1450 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Encapsulados: TO264
Búsqueda de reemplazo de APT60M80L2VR MOSFET
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APT60M80L2VR datasheet
apt60m80l2vrg.pdf
APT60M80L2VR 600V 65A 0.080 POWER MOS V MOSFET L2VR TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Pack
apt60m80l2vfrg.pdf
APT60M80L2VFR 600V 65A 0.080 POWER MOS V FREDFET L2VFR TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX P
apt60m80jvr.pdf
APT60M80JVR 600V 55A 0.080 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Popular SOT-227
Otros transistores... APT6060BNR, APT60M60JFLL, APT60M60JLL, APT60M75JFLL, APT60M75JLL, APT60M75L2FLL, APT60M75L2LL, APT60M80JVR, 5N65, APT77N60JC3, APT8011JFLL, APT8011JLL, APT8014JFLL, APT8014JLL, APT8014L2FLL, APT8014L2LL, APT8018L2VFR
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