APT60M80L2VR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT60M80L2VR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 830 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 1450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO264

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APT60M80L2VR datasheet

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APT60M80L2VR

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APT60M80L2VR

APT60M80L2VR 600V 65A 0.080 POWER MOS V MOSFET L2VR TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Pack

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APT60M80L2VR

APT60M80L2VFR 600V 65A 0.080 POWER MOS V FREDFET L2VFR TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX P

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apt60m80jvr.pdf pdf_icon

APT60M80L2VR

APT60M80JVR 600V 55A 0.080 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Popular SOT-227

Otros transistores... APT6060BNR, APT60M60JFLL, APT60M60JLL, APT60M75JFLL, APT60M75JLL, APT60M75L2FLL, APT60M75L2LL, APT60M80JVR, 5N65, APT77N60JC3, APT8011JFLL, APT8011JLL, APT8014JFLL, APT8014JLL, APT8014L2FLL, APT8014L2LL, APT8018L2VFR