Справочник MOSFET. APT60M80L2VR

 

APT60M80L2VR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT60M80L2VR
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 830 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 65 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 530 nC
   Время нарастания (tr): 17 ns
   Выходная емкость (Cd): 1450 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
   Тип корпуса: TO264

 Аналог (замена) для APT60M80L2VR

 

 

APT60M80L2VR Datasheet (PDF)

 ..1. Size:77K  apt
apt60m80l2vr.pdf

APT60M80L2VR
APT60M80L2VR

APT60M80L2VR600V 65A 0.080WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD

 0.1. Size:160K  apt
apt60m80l2vrg.pdf

APT60M80L2VR
APT60M80L2VR

APT60M80L2VR600V 65A 0.080 POWER MOS V MOSFETL2VRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Pack

 3.1. Size:160K  apt
apt60m80l2vfrg.pdf

APT60M80L2VR
APT60M80L2VR

APT60M80L2VFR600V 65A 0.080 POWER MOS V FREDFETL2VFRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX P

 6.1. Size:69K  apt
apt60m80jvr.pdf

APT60M80L2VR
APT60M80L2VR

APT60M80JVR600V 55A 0.080POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Popular SOT-227

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