APT60M80L2VR Specs and Replacement

Type Designator: APT60M80L2VR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 830 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 1450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO264

APT60M80L2VR substitution

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APT60M80L2VR datasheet

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APT60M80L2VR

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APT60M80L2VR

APT60M80L2VR 600V 65A 0.080 POWER MOS V MOSFET L2VR TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Pack... See More ⇒

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APT60M80L2VR

APT60M80L2VFR 600V 65A 0.080 POWER MOS V FREDFET L2VFR TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX P... See More ⇒

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APT60M80L2VR

APT60M80JVR 600V 55A 0.080 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Popular SOT-227 ... See More ⇒

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Detailed specifications: APT6060BNR, APT60M60JFLL, APT60M60JLL, APT60M75JFLL, APT60M75JLL, APT60M75L2FLL, APT60M75L2LL, APT60M80JVR, 5N65, APT77N60JC3, APT8011JFLL, APT8011JLL, APT8014JFLL, APT8014JLL, APT8014L2FLL, APT8014L2LL, APT8018L2VFR

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