All MOSFET. APT60M80L2VR Datasheet

 

APT60M80L2VR Datasheet and Replacement


   Type Designator: APT60M80L2VR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 830 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 1450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO264
 

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APT60M80L2VR Datasheet (PDF)

 ..1. Size:77K  apt
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APT60M80L2VR

APT60M80L2VR600V 65A 0.080WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD

 0.1. Size:160K  apt
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APT60M80L2VR

APT60M80L2VR600V 65A 0.080 POWER MOS V MOSFETL2VRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Pack

 3.1. Size:160K  apt
apt60m80l2vfrg.pdf pdf_icon

APT60M80L2VR

APT60M80L2VFR600V 65A 0.080 POWER MOS V FREDFETL2VFRTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX P

 6.1. Size:69K  apt
apt60m80jvr.pdf pdf_icon

APT60M80L2VR

APT60M80JVR600V 55A 0.080POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Popular SOT-227

Datasheet: APT6060BNR , APT60M60JFLL , APT60M60JLL , APT60M75JFLL , APT60M75JLL , APT60M75L2FLL , APT60M75L2LL , APT60M80JVR , 4435 , APT77N60JC3 , APT8011JFLL , APT8011JLL , APT8014JFLL , APT8014JLL , APT8014L2FLL , APT8014L2LL , APT8018L2VFR .

History: UPA1793G | UTC654 | AUIRFP4227 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | AM90N06-04M2B

Keywords - APT60M80L2VR MOSFET datasheet

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