FQA19N20C Todos los transistores

 

FQA19N20C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA19N20C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 21.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 195 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm

Encapsulados: TO3P

 Búsqueda de reemplazo de FQA19N20C MOSFET

- Selecciónⓘ de transistores por parámetros

 

FQA19N20C datasheet

 ..1. Size:868K  fairchild semi
fqa19n20c.pdf pdf_icon

FQA19N20C

QFET FQA19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21.8A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailored to

 6.1. Size:731K  fairchild semi
fqa19n20l.pdf pdf_icon

FQA19N20C

May 2000 TM QFET QFET QFET QFET 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has b

 8.1. Size:583K  fairchild semi
fqa19n60.pdf pdf_icon

FQA19N20C

April 2000 TM QFET QFET QFET QFET FQA19N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18.5A, 600V, RDS(on) = 0.38 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 70 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has bee

Otros transistores... SDF18N50 , SDF08N60 , SDF04N40 , SDF03N80 , SDF02N65 , SDF02N20 , SDD07N65 , FQA18N50V2 , AOD4184A , FQA38N30 , FQB46N15 , FQI46N15 , FQP10N50CF , FDB86366F085 , FCH077N65FF085 , FCH190N65FF085 , FQT2P25 .

History: IRFI4110G

 

 

 


History: IRFI4110G

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E | ASD65R350E | ASD65R300E | ASD65R280E | ASD65R270E | ASD60R330E | ASD60R280E | ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E

 

 

 

Popular searches

2sa725 | c5242 transistor | 2sa726 replacement | a1941 datasheet | hrf3205 | c2837 datasheet | 2n414 | c3998

 

 

↑ Back to Top
.