FQA19N20C MOSFET Datasheet: N-Ch, 200V, 21.8A. Full specification with pinout and replacement list

FQA19N20C Specs and Replacement

Type Designator: FQA19N20C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO3P

FQA19N20C substitution

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FQA19N20C datasheet

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QFET FQA19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21.8A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailored to ... See More ⇒

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May 2000 TM QFET QFET QFET QFET 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has b... See More ⇒

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April 2000 TM QFET QFET QFET QFET FQA19N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18.5A, 600V, RDS(on) = 0.38 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 70 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has bee... See More ⇒

Detailed specifications: SDF18N50, SDF08N60, SDF04N40, SDF03N80, SDF02N65, SDF02N20, SDD07N65, FQA18N50V2, AOD4184A, FQA38N30, FQB46N15, FQI46N15, FQP10N50CF, FDB86366F085, FCH077N65FF085, FCH190N65FF085, FQT2P25