All MOSFET. FQA19N20C Datasheet

 

FQA19N20C Datasheet and Replacement


   Type Designator: FQA19N20C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO3P
 

 FQA19N20C substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQA19N20C Datasheet (PDF)

 ..1. Size:868K  fairchild semi
 fqa19n20c.pdf pdf_icon

FQA19N20C

QFETFQA19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21.8A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially tailored to

 6.1. Size:731K  fairchild semi
 fqa19n20l.pdf pdf_icon

FQA19N20C

May 2000TMQFETQFETQFETQFET 200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has b

 8.1. Size:583K  fairchild semi
 fqa19n60.pdf pdf_icon

FQA19N20C

April 2000TMQFETQFETQFETQFETFQA19N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18.5A, 600V, RDS(on) = 0.38 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 70 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has bee

Datasheet: SDF18N50 , SDF08N60 , SDF04N40 , SDF03N80 , SDF02N65 , SDF02N20 , SDD07N65 , FQA18N50V2 , HY1906P , FQA38N30 , FQB46N15 , FQI46N15 , FQP10N50CF , FDB86366F085 , FCH077N65FF085 , FCH190N65FF085 , FQT2P25 .

History: IRFR3504Z | WMO18N65EM | HSH15810 | CJ2302S | SFG08R16DF | IPP126N10N3G | MSW16N50

Keywords - FQA19N20C MOSFET datasheet

 FQA19N20C cross reference
 FQA19N20C equivalent finder
 FQA19N20C lookup
 FQA19N20C substitution
 FQA19N20C replacement

 

 
Back to Top

 


 
.