FQA19N20C - параметры транзистора MOSFET, его аналоги, datasheet

FQA19N20C Datasheet (PDF)

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QFETFQA19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21.8A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially tailored to

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May 2000TMQFETQFETQFETQFET 200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has b

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April 2000TMQFETQFETQFETQFETFQA19N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18.5A, 600V, RDS(on) = 0.38 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 70 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has bee

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