FQB10N50CFTM Todos los transistores

 ..1. Size:594K  fairchild semi
 fqb10n50cftm.pdf

October 2013 FQB10N50CF N-Channel QFET FRFET MOSFET 500 V, 10 A, 610 m Features Description 10 A, 500 V, RDS(on) = 610 m (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using Fairchild Semiconductor s proprietary planar stripe Low gate charge ( Typ. 45 nC) and DMOS technology. This advanced MOSFET technology has been esp

 8.1. Size:614K  fairchild semi
 fqb10n60ctm fqi10n60ctu.pdf

TM QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailore

 8.2. Size:606K  fairchild semi
 fqb10n20c.pdf

TM QFET FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailore

 8.3. Size:575K  fairchild semi
 fqb10n20ltm.pdf

December 2000 TM QFET QFET QFET QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced