FQB10N50CFTM Todos los transistores

 

FQB10N50CFTM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB10N50CFTM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 143 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 182 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.61 Ohm
   Paquete / Cubierta: TO263 D2PAK
 

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FQB10N50CFTM Datasheet (PDF)

 ..1. Size:594K  fairchild semi
 fqb10n50cftm.pdf pdf_icon

FQB10N50CFTM

October 2013FQB10N50CFN-Channel QFET FRFET MOSFET500 V, 10 A, 610 mFeatures Description 10 A, 500 V, RDS(on) = 610 m (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using Fairchild Semiconductors proprietary planar stripe Low gate charge ( Typ. 45 nC)and DMOS technology. This advanced MOSFET technology has been esp

 8.1. Size:614K  fairchild semi
 fqb10n60ctm fqi10n60ctu.pdf pdf_icon

FQB10N50CFTM

TMQFETFQB10N60C / FQI10N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 44 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailore

 8.2. Size:606K  fairchild semi
 fqb10n20c.pdf pdf_icon

FQB10N50CFTM

TMQFETFQB10N20C/FQI10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been especially tailore

 8.3. Size:575K  fairchild semi
 fqb10n20ltm.pdf pdf_icon

FQB10N50CFTM

December 2000TMQFETQFETQFETQFETFQB10N20L / FQI10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced

MOSTRAR MÁS

Otros transistores... FDD6296 , FCP16N60 , FDS8960C , FCPF11N60F , HUF76645SF085 , FCPF20N60 , FDS8672S , FDB045AN08F085 , IRFB4227 , FDD13AN06F085 , FDMS039N08B , FDT86256 , FDI045N10A , FDP045N10A , FDP150N10A , FDP020N06B , FDP027N08B .

History: 2SK2671 | SHDC224701 | IRF9Z24PBF | RU40191S | 3N189 | FCU600N65S3R0

 

 
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