All MOSFET. FQB10N50CFTM Datasheet

 

FQB10N50CFTM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB10N50CFTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 182 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.61 Ohm
   Package: TO263 D2PAK

 FQB10N50CFTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB10N50CFTM Datasheet (PDF)

 ..1. Size:594K  fairchild semi
 fqb10n50cftm.pdf

FQB10N50CFTM FQB10N50CFTM

October 2013FQB10N50CFN-Channel QFET FRFET MOSFET500 V, 10 A, 610 mFeatures Description 10 A, 500 V, RDS(on) = 610 m (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using Fairchild Semiconductors proprietary planar stripe Low gate charge ( Typ. 45 nC)and DMOS technology. This advanced MOSFET technology has been esp

 8.1. Size:614K  fairchild semi
 fqb10n60ctm fqi10n60ctu.pdf

FQB10N50CFTM FQB10N50CFTM

TMQFETFQB10N60C / FQI10N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 44 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailore

 8.2. Size:606K  fairchild semi
 fqb10n20c.pdf

FQB10N50CFTM FQB10N50CFTM

TMQFETFQB10N20C/FQI10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been especially tailore

 8.3. Size:575K  fairchild semi
 fqb10n20ltm.pdf

FQB10N50CFTM FQB10N50CFTM

December 2000TMQFETQFETQFETQFETFQB10N20L / FQI10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE60P25K

 

 
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