FQB10N50CFTM PDF and Equivalents Search

 

FQB10N50CFTM Specs and Replacement

Type Designator: FQB10N50CFTM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 143 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 182 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.61 Ohm

Package: TO263 D2PAK

FQB10N50CFTM substitution

- MOSFET ⓘ Cross-Reference Search

 

FQB10N50CFTM datasheet

 ..1. Size:594K  fairchild semi
 fqb10n50cftm.pdf pdf_icon

FQB10N50CFTM

October 2013 FQB10N50CF N-Channel QFET FRFET MOSFET 500 V, 10 A, 610 m Features Description 10 A, 500 V, RDS(on) = 610 m (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using Fairchild Semiconductor s proprietary planar stripe Low gate charge ( Typ. 45 nC) and DMOS technology. This advanced MOSFET technology has been esp... See More ⇒

 8.1. Size:614K  fairchild semi
 fqb10n60ctm fqi10n60ctu.pdf pdf_icon

FQB10N50CFTM

TM QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailore... See More ⇒

 8.2. Size:606K  fairchild semi
 fqb10n20c.pdf pdf_icon

FQB10N50CFTM

TM QFET FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailore... See More ⇒

 8.3. Size:575K  fairchild semi
 fqb10n20ltm.pdf pdf_icon

FQB10N50CFTM

December 2000 TM QFET QFET QFET QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced ... See More ⇒

SHOW MORE

Detailed specifications: FDD6296, FCP16N60, FDS8960C, FCPF11N60F, HUF76645SF085, FCPF20N60, FDS8672S, FDB045AN08F085, 10N60, FDD13AN06F085, FDMS039N08B, FDT86256, FDI045N10A, FDP045N10A, FDP150N10A, FDP020N06B, FDP027N08B

Keywords - FQB10N50CFTM MOSFET specs

 FQB10N50CFTM cross reference

 FQB10N50CFTM equivalent finder

 FQB10N50CFTM pdf lookup

 FQB10N50CFTM substitution

 FQB10N50CFTM replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.