FQB10N50CFTM - параметры транзистора MOSFET, его аналоги, datasheet

FQB10N50CFTM Datasheet (PDF)

..1. Size:594K fairchild semi
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October 2013FQB10N50CFN-Channel QFET FRFET MOSFET500 V, 10 A, 610 mFeatures Description 10 A, 500 V, RDS(on) = 610 m (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using Fairchild Semiconductors proprietary planar stripe Low gate charge ( Typ. 45 nC)and DMOS technology. This advanced MOSFET technology has been esp

8.1. Size:614K fairchild semi
fqb10n60ctm fqi10n60ctu.pdf pdf_icon

TMQFETFQB10N60C / FQI10N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 44 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailore

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fqb10n20c.pdf pdf_icon

TMQFETFQB10N20C/FQI10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been especially tailore

8.3. Size:575K fairchild semi
fqb10n20ltm.pdf pdf_icon

December 2000TMQFETQFETQFETQFETFQB10N20L / FQI10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced

Другие MOSFET... FDD6296 , FCP16N60 , FDS8960C , FCPF11N60F , HUF76645SF085 , FCPF20N60 , FDS8672S , FDB045AN08F085 , IRFB4227 , FDD13AN06F085 , FDMS039N08B , FDT86256 , FDI045N10A , FDP045N10A , FDP150N10A , FDP020N06B , FDP027N08B .