FDMS86320 Todos los transistores

 

FDMS86320 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS86320

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 353 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0117 Ohm

Encapsulados: PQFN5X6

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FDMS86320 datasheet

 ..1. Size:449K  1
fdms86320.pdf pdf_icon

FDMS86320

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:338K  fairchild semi
fdms86320.pdf pdf_icon

FDMS86320

October 2014 FDMS86320 N-Channel PowerTrench MOSFET 80 V, 44 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or Advanced P

 6.1. Size:431K  1
fdms86322.pdf pdf_icon

FDMS86320

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:216K  fairchild semi
fdms86322.pdf pdf_icon

FDMS86320

October 2010 FDMS86322 N-Channel PowerTrench MOSFET 80 V, 60 A, 7.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 A been especially tailored to minimize the on-state resistance and Advanced P

Otros transistores... FDP027N08B , FDMA8884 , FDC8878 , FDC8884 , FDZ661PZ , FDZ663P , FDMC86320 , FDD8424HF085A , IRLB4132 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , FDU7N60NZTU , FCPF190N60 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 .

History: FDMC8321L

 

 

 


History: FDMC8321L

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