All MOSFET. FDMS86320 Datasheet

 

FDMS86320 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMS86320

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 69 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 44 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0117 Ohm

Package: PQFN5X6

FDMS86320 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMS86320 Datasheet (PDF)

1.1. fdms86320.pdf Size:338K _fairchild_semi

FDMS86320
FDMS86320

October 2014 FDMS86320 N-Channel PowerTrench® MOSFET 80 V, 44 A, 11.7 mΩ Features General Description Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or Advanced P

2.1. fdms86322.pdf Size:216K _fairchild_semi

FDMS86320
FDMS86320

October 2010 FDMS86322 N-Channel PowerTrench® MOSFET 80 V, 60 A, 7.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 A Semiconductor‘s advanced Power Trench® process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 A been especially tailored to minimize the on-state resistance and Advanced P

3.1. fdms86300.pdf Size:267K _fairchild_semi

FDMS86320
FDMS86320

August 2011 FDMS86300 N-Channel PowerTrench® MOSFET 80 V, 42 A, 3.9 mΩ Features General Description Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A ringing of DC/DC converters using either synchronous or Advanced Pac

3.2. fdms86300dc.pdf Size:244K _fairchild_semi

FDMS86320
FDMS86320

December 2014 FDMS86300DC N-Channel Dual CoolTM PowerTrench® MOSFET 80 V, 110 A, 3.1 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.0 mΩ a

3.3. fdms86350.pdf Size:272K _fairchild_semi

FDMS86320
FDMS86320

November 2013 FDMS86350 N-Channel PowerTrench® MOSFET 80 V, 130 A, 2.4 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A been especially tailored to minimize the on-state resistance and Advanced

3.4. fdms86310.pdf Size:309K _fairchild_semi

FDMS86320
FDMS86320

October 2014 FDMS86310 N-Channel PowerTrench® MOSFET 80 V, 50 A, 4.8 mΩ Features General Description Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A ringing of DC/DC converters using either synchronous or Advanced Packa

3.5. fdms86368 f085.pdf Size:535K _fairchild_semi

FDMS86320
FDMS86320

December 2014 FDMS86368_F085 N-Channel PowerTrench® MOSFET 80 V, 80 A, 4.5 mΩ Features Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For cu

Datasheet: FDP027N08B , FDMA8884 , FDC8878 , FDC8884 , FDZ661PZ , FDZ663P , FDMC86320 , FDD8424H_F085A , 2N4416 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , FDU7N60NZTU , FCPF190N60 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 .

 


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