All MOSFET. FDMS86320 Datasheet

 

FDMS86320 Datasheet and Replacement


   Type Designator: FDMS86320
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 353 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0117 Ohm
   Package: PQFN5X6
 

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FDMS86320 Datasheet (PDF)

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FDMS86320

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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FDMS86320

October 2014FDMS86320N-Channel PowerTrench MOSFET80 V, 44 A, 11.7 mFeatures General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.5 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 m at VGS = 8 V, ID = 8.5 Aringing of DC/DC converters using either synchronous or Advanced P

 6.1. Size:431K  1
fdms86322.pdf pdf_icon

FDMS86320

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:216K  fairchild semi
fdms86322.pdf pdf_icon

FDMS86320

October 2010FDMS86322N-Channel PowerTrench MOSFET 80 V, 60 A, 7.65 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 Abeen especially tailored to minimize the on-state resistance and Advanced P

Datasheet: FDP027N08B , FDMA8884 , FDC8878 , FDC8884 , FDZ661PZ , FDZ663P , FDMC86320 , FDD8424HF085A , 5N60 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , FDU7N60NZTU , FCPF190N60 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 .

Keywords - FDMS86320 MOSFET datasheet

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