FDMS86320. Аналоги и основные параметры
Наименование производителя: FDMS86320
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 353 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0117 Ohm
Тип корпуса: PQFN5X6
Аналог (замена) для FDMS86320
- подборⓘ MOSFET транзистора по параметрам
FDMS86320 даташит
fdms86320.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86320.pdf
October 2014 FDMS86320 N-Channel PowerTrench MOSFET 80 V, 44 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or Advanced P
fdms86322.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86322.pdf
October 2010 FDMS86322 N-Channel PowerTrench MOSFET 80 V, 60 A, 7.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 A been especially tailored to minimize the on-state resistance and Advanced P
Другие MOSFET... FDP027N08B , FDMA8884 , FDC8878 , FDC8884 , FDZ661PZ , FDZ663P , FDMC86320 , FDD8424HF085A , IRLB4132 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , FDU7N60NZTU , FCPF190N60 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 .
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Список транзисторов
Обновления
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