FDMS86320 - описание и поиск аналогов

 

FDMS86320. Аналоги и основные параметры

Наименование производителя: FDMS86320

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 353 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0117 Ohm

Тип корпуса: PQFN5X6

Аналог (замена) для FDMS86320

- подборⓘ MOSFET транзистора по параметрам

 

FDMS86320 даташит

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fdms86320.pdfpdf_icon

FDMS86320

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:338K  fairchild semi
fdms86320.pdfpdf_icon

FDMS86320

October 2014 FDMS86320 N-Channel PowerTrench MOSFET 80 V, 44 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or Advanced P

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fdms86322.pdfpdf_icon

FDMS86320

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:216K  fairchild semi
fdms86322.pdfpdf_icon

FDMS86320

October 2010 FDMS86322 N-Channel PowerTrench MOSFET 80 V, 60 A, 7.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 A been especially tailored to minimize the on-state resistance and Advanced P

Другие MOSFET... FDP027N08B , FDMA8884 , FDC8878 , FDC8884 , FDZ661PZ , FDZ663P , FDMC86320 , FDD8424HF085A , IRLB4132 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , FDU7N60NZTU , FCPF190N60 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 .

 

 

 

 

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