Справочник MOSFET. FDMS86320

 

FDMS86320 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMS86320
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 353 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0117 Ohm
   Тип корпуса: PQFN5X6

 Аналог (замена) для FDMS86320

 

 

FDMS86320 Datasheet (PDF)

 ..1. Size:449K  1
 fdms86320.pdf

FDMS86320 FDMS86320

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:338K  fairchild semi
 fdms86320.pdf

FDMS86320 FDMS86320

October 2014FDMS86320N-Channel PowerTrench MOSFET80 V, 44 A, 11.7 mFeatures General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.5 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 m at VGS = 8 V, ID = 8.5 Aringing of DC/DC converters using either synchronous or Advanced P

 6.1. Size:431K  1
 fdms86322.pdf

FDMS86320 FDMS86320

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:216K  fairchild semi
 fdms86322.pdf

FDMS86320 FDMS86320

October 2010FDMS86322N-Channel PowerTrench MOSFET 80 V, 60 A, 7.65 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 Abeen especially tailored to minimize the on-state resistance and Advanced P

 6.3. Size:431K  onsemi
 fdms86322.pdf

FDMS86320 FDMS86320

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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