FDD7N60NZ Todos los transistores

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FDD7N60NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD7N60NZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 5.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1.25 Ohm

Empaquetado / Estuche: TO252

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FDD7N60NZ Datasheet (PDF)

1.1. fdd7n60nz.pdf Size:663K _fairchild_semi

FDD7N60NZ
FDD7N60NZ

November 2013 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features Description • RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 13 nC) technology. This advanced MOSFET family has the smallest on- • Low Crs

5.1. fdd7n20 fdu7n20.pdf Size:346K _fairchild_semi

FDD7N60NZ
FDD7N60NZ

April 2007 UniFETTM FDD7N20 / FDU7N20 tm N-Channel MOSFET 200V, 5A, 0.69? Features Description RDS(on) = 0.58? ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge( Typ. 5nC ) stripe, DMOS technology. Low Crss ( Typ. 5pF ) This advanced technology has been especically

5.2. fdd7n20tm.pdf Size:607K _fairchild_semi

FDD7N60NZ
FDD7N60NZ

November 2013 FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage • RDS(on) = 580 mΩ (Typ.) @ VGS = 10 V, ID = 2.5 A MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 5 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching perfo

5.3. fdd7n25lz.pdf Size:291K _fairchild_semi

FDD7N60NZ
FDD7N60NZ

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55? Features Description RDS(on) = 0.43? ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ.12nC) DMOS technology. Low Crss ( Typ. 8pF) This advance technology has been especially tailored t

Otros transistores... FDC8878 , FDC8884 , FDZ661PZ , FDZ663P , FDMC86320 , FDD8424H_F085A , FDMS86320 , FDD5N60NZ , IRF9540 , FDMS8020 , FDU7N60NZTU , FCPF190N60 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 , FDMS86250 , FDMS86540 .

 


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