FDD7N60NZ Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDD7N60NZ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 90 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 70 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.25 Ohm
Тип корпуса: TO252
- подбор MOSFET транзистора по параметрам
FDD7N60NZ Datasheet (PDF)
fdd7n60nz fdd7n60nztm fdu7n60nztu.pdf

November 2013FDD7N60NZ / FDU7N60NZTUN-Channel UniFETTM II MOSFET600 V, 5.5 A, 1.25 Features Description RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 13 nC)technology. This advanced MOSFET family has the smallest on- Low Crs
fdd7n60nz.pdf

isc N-Channel MOSFET Transistor FDD7N60NZFEATURESDrain Current : I =5.5A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.25(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
fdd7n25lztm.pdf

December 2010 UniFETTMFDD7N25LZN-Channel MOSFET 250V, 6.2A, 0.55Features Description RDS(on) = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ.12nC)DMOS technology. Low Crss ( Typ. 8pF)This advance technology has been especial
fdd7n20tm.pdf

November 2013FDD7N20TMN-Channel UniFETTM MOSFET200 V, 5 A, 690 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 580 m (Typ.) @ VGS = 10 V, ID = 2.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 5 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better switching perfo
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SI9933ADY | SQJ460AEP | TPCF8102 | IRF6217 | 2SK56 | IRC8405 | 7N65KG-T2Q-T
History: SI9933ADY | SQJ460AEP | TPCF8102 | IRF6217 | 2SK56 | IRC8405 | 7N65KG-T2Q-T



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