FDD7N60NZ MOSFET Datasheet: N-Ch, 600V, 5.5A. Full specification with pinout and replacement list

FDD7N60NZ Specs and Replacement

Type Designator: FDD7N60NZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm

Package: TO252

FDD7N60NZ substitution

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FDD7N60NZ datasheet

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fdd7n60nz fdd7n60nztm fdu7n60nztu.pdf pdf_icon

November 2013 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Features Description RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 13 nC) technology. This advanced MOSFET family has the smallest on- Low Crs... See More ⇒

..2. Size:288K inchange semiconductor
fdd7n60nz.pdf pdf_icon

isc N-Channel MOSFET Transistor FDD7N60NZ FEATURES Drain Current I =5.5A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R =1.25 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

9.1. Size:285K fairchild semi
fdd7n25lztm.pdf pdf_icon

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55 Features Description RDS(on) = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ.12nC) DMOS technology. Low Crss ( Typ. 8pF) This advance technology has been especial... See More ⇒

9.2. Size:607K fairchild semi
fdd7n20tm.pdf pdf_icon

November 2013 FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 580 m (Typ.) @ VGS = 10 V, ID = 2.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 5 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching perfo... See More ⇒